Transferability of interatomic potentials for silicene

• Marcin Maździarz

Beilstein J. Nanotechnol. 2023, 14, 574–585, doi:10.3762/bjnano.14.48

• silicon and five polymorphs of silicon dioxide SNAP [43]: the machine-learning-based (ML-IAP) linear variant of spectral neighbor analysis potential (SNAP) fitted to total energies and interatomic forces in ground-state Si, strained structures, and slab structures obtained from DFT calculations qSNAP [43

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• also been obtained by depositing Au thin films on Si substrates with a thick silicon dioxide (SiO2) layer and subsequent rapid heating in reducing atmosphere. Here, the Si vapor source is silicon monoxide (SiO) gas produced by the decomposition of the SiO2 layer or the active oxidation of the Si

Hydroxyapatite–bioglass nanocomposites: Structural, mechanical, and biological aspects

• Olga Shikimaka,
• Mihaela Bivol,
• Bogdan A. Sava,
• Marius Dumitru,
• Christu Tardei,
• Beatrice G. Sbarcea,
• Daria Grabco,
• Constantin Pyrtsac,
• Daria Topal,
• Andrian Prisacaru,
• Vitalie Cobzac and
• Viorel Nacu

Beilstein J. Nanotechnol. 2022, 13, 1490–1504, doi:10.3762/bjnano.13.123

• by an unconventional wet route followed by melting [31][37][38]. As raw materials, the ultra-purity grade reagents boron oxide (B2O3), magnesium oxide (MgO,) potassium carbonate (K2CO3), phosphoric acid (H3PO4), silicon dioxide (SiO2), zinc oxide (ZnO), and cerium oxide (CeO2) have been used. The

Numerical modeling of a multi-frequency receiving system based on an array of dipole antennas for LSPE-SWIPE

• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Dmitrii A. Pimanov,
• Ekaterina A. Matrozova,
• Anna V. Gordeeva,
• Andrey L. Pankratov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 865–872, doi:10.3762/bjnano.13.77

• GHz, the second half is occupied by cells for 240 GHz. Receiving cells with integrated CEBs are located on a 260 µm thick silicon substrate with a silicon dioxide layer. The difficulty of the considered receiving system is the existing specific sample holder, which allows the receiving of the signal

Identifying diverse metal oxide nanomaterials with lethal effects on embryonic zebrafish using machine learning

• Richard Liam Marchese Robinson,
• Haralambos Sarimveis,
• Philip Doganis,
• Xiaodong Jia,
• Marianna Kotzabasaki,
• Christiana Gousiadou,
• Stacey Lynn Harper and
• Terry Wilkins

Beilstein J. Nanotechnol. 2021, 12, 1297–1325, doi:10.3762/bjnano.12.97

• non-toxic, according to two distinct categorisations based upon mortality data determined at 24 or 120 hpf for embryonic zebrafish continuously exposed to the ENMs via fish water test medium [31]. (One dataset entry corresponded to an ENM with a silicon dioxide core. Whilst silicon dioxide is

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• . Gracheva and co-workers prepared gas-sensitive fractal structures based on SnO2 and silicon dioxide (SiO2) by a sol–gel technique [57][69][70]. The evolution of fractal aggregates of tin and silicon dioxides resulted in the formation of spherical, labyrinth, and percolation network structures. The

An overview of microneedle applications, materials, and fabrication methods

• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2021, 12, 1034–1046, doi:10.3762/bjnano.12.77

• after 2–3 weeks [95]. In other work, hollow pyramidal silicon dioxide microneedle arrays, with heights of 150–200 μm, were made by oxidising microporous silicon produced by a combination of wet etching and electrochemistry [96]. Porous silicon microneedles may overcome the brittle properties of single

Molecular assemblies on surfaces: towards physical and electronic decoupling of organic molecules

• Sabine Maier and
• Meike Stöhr

Beilstein J. Nanotechnol. 2021, 12, 950–956, doi:10.3762/bjnano.12.71

• ][37][38][39], while also B deposition was shown to result in effective passivation of the Si surface [40][41]. In particular for electronic devices, oxidized semiconductor surfaces (e.g., silicon dioxide layers formed on bare silicon) are mostly used as substrates for fabricating devices [42]. Most of

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• of bilayer MoS2 can be found in [63]. Chemical properties Local helium ion irradiation has also been shown to modify the chemical properties of a material, for example, chemical etch rates. In HIM studies by Petrov et al. irradiating silicon nitride [64][65] and silicon dioxide [66][67] with 1015

Structural and optical characteristics determined by the sputtering deposition conditions of oxide thin films

• Petronela Prepelita,
• Florin Garoi and
• Valentin Craciun

Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29

• Petronela Prepelita Florin Garoi Valentin Craciun National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, Magurele 077125, Ilfov, Romania 10.3762/bjnano.12.29 Abstract The influence of film thickness on the structural and optical properties of silicon

• dioxide (SiO2) and zinc oxide (ZnO) thin films deposited by radio frequency magnetron sputtering on quartz substrates was investigated. The deposition conditions were optimized to achieve stoichiometric thin films. The orientation of crystallites, structure, and composition were investigated by X-ray

Scanning transmission imaging in the helium ion microscope using a microchannel plate with a delay line detector

• Eduardo Serralta,
• Nico Klingner,
• Olivier De Castro,
• Michael Mousley,
• Santhana Eswara,
• Serge Duarte Pinto,
• Tom Wirtz and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2020, 11, 1854–1864, doi:10.3762/bjnano.11.167

• experimental contrast match qualitatively. A quantitative analysis shows relevant differences in the intensity levels of the regions. The relative intensity level of the area with the layer of silicon dioxide on top of the silicon nitride differs considerably in experiment and simulation. The signal in the

• area on which only gold is deposited is stronger than expected while the signal on the area on which only silicon dioxide is deposited is weaker. A further study on the thickness of each layer using different techniques has not been performed, although deviations of the layer thickness could be

• angle from 8 to 13.9°. The scale bars are 1 μm. Bright-field image showing contrast due to the dependence of the exit angle on the material and the thickness of the layer. (a) Bright-field STIM image with collection angle from 0 to 4.5° of a silicon nitride membrane with silicon dioxide deposited on the

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• -switching process and not to the permanent and detrimental electrical breakdown failure that occurs in any dielectric material. Experimental The patterned GST-225 line cells used for this study were deposited on silicon dioxide (SiO2), had bottom metal contact pads (tungsten with Ti/TiN liner), and were

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

• Jingran Zhang,
• Tianqi Jia,
• Xiaoping Li,
• Junjie Yang,
• Zhengkai Li,
• Guangfeng Shi,
• Xinming Zhang and
• Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

• ion beam (FIB) technology can also be used to directly fabricate high-precision nanostructures on surfaces made of silicon, silicon dioxide and metal [27][28][29][30][31][32][33]. FIB technology is therefore used as a processing method for SERS substrates. Using the FIB method, Lin et al. [29

Liquid crystal tunable claddings for polymer integrated optical waveguides

• José M. Otón,
• Manuel Caño-García,
• Fernando Gordo,
• Eva Otón,
• Morten A. Geday and
• Xabier Quintana

Beilstein J. Nanotechnol. 2019, 10, 2163–2170, doi:10.3762/bjnano.10.209

• material paves the way to the use of large wafers, well-known efficient microelectronic processes and remarkable cost savings. Silicon waveguides can be developed on silicon dioxide, resulting in silicon-on-insulator (SOI) wafer structures compatible to CMOS processes [5]. This opens the possibility of

Revisiting semicontinuous silver films as surface-enhanced Raman spectroscopy substrates

• Malwina Liszewska,
• Bogusław Budner,
• Małgorzata Norek,
• Bartłomiej J. Jankiewicz and
• Piotr Nyga

Beilstein J. Nanotechnol. 2019, 10, 1048–1055, doi:10.3762/bjnano.10.105

• hypothetical continuous film) of silver is e-beam deposited on a proper adhesion layer (for example silicon dioxide) [43][44]. The results of simulations and experimental studies show that the hot spots exist in SSFs [2][44][45][46][47], and hence they have been extensively studied as SERS substrates [40][41

• was performed at room temperature. Glass substrates were first coated with 10 nm thick layer of silicon dioxide (SiO2). Next, without breaking vacuum, silver was deposited on the substrates. Two depositions were performed and in each of them several substrates were located at a different distance from

• silver film was removed to form a step like structure with two distinct areas (glass with silicon dioxide and glass with silicon dioxide and silver film) of different height. A several micrometer square AFM scan (not presented) of such step-like structures provides an estimate of the SSF height but does

Development of an anti-pollution coating process technology for the application of an on-site PV module

• Sejin Jung,
• Wonseok Choi,
• Jung Hyun Kim and
• Jang Myoun Ko

Beilstein J. Nanotechnol. 2019, 10, 332–336, doi:10.3762/bjnano.10.32

• -pollution characteristics of the PV modules contained silicon dioxide (SiO2), lithium (Li), and potassium (K). The viscosity, density, and specific gravity (referring to the density of water) of the coating solution were 0.01–0.03 kg/m·s, 1.1 g/cm3, and 1.13 ± 0.05, respectively. The solution can be used to

Bidirectional biomimetic flow sensing with antiparallel and curved artificial hair sensors

• Claudio Abels,
• Antonio Qualtieri,
• Toni Lober,
• Alessandro Mariotti,
• Lily D. Chambers,
• Massimo De Vittorio,
• William M. Megill and
• Francesco Rizzi

Beilstein J. Nanotechnol. 2019, 10, 32–46, doi:10.3762/bjnano.10.4

• stress-driven artificial hair sensor. The fabrication process is subdivided into the following main steps: Depositing functional material layers: The flow sensor is based on a silicon-on-insulator (SOI) substrate which is made up of a 400 μm silicon wafer, a 2 μm thick silicon dioxide (SiO2) insulation

Electrostatic force microscopy for the accurate characterization of interphases in nanocomposites

• Diana El Khoury,
• Richard Arinero,
• Jean-Charles Laurentie,
• Mikhaël Bechelany,
• Michel Ramonda and
• Jérôme Castellon

Beilstein J. Nanotechnol. 2018, 9, 2999–3012, doi:10.3762/bjnano.9.279

• “calibrating” the EFM technique for future interphase studies. EFM was demonstrated to be able to discriminate between alumina and silicon dioxide interphase layers of 50 and 100 nm thickness deposited over polystyrene spheres and different types of matrix materials. Consistent permittivity values were also

• nm) were deposited or grown over the whole sample surface. Aluminum oxide (Al2O3) shells were prepared using the atomic layer deposition (ALD) method, polyvinyl acetate (PVAc) shells by spin coating, and silicon dioxide (SiO2) shells by plasma sputtering deposition (PSD). The signature of each

• ) and stirred with a magnetic stirrer until no particulate was visible (around 30 min). The spinning program used for thin film deposition was: a) 100 rpm for 15 s, b) 500 rpm for 15 s, and c) 2000 rpm for 60 s, all with a ramp of 2000 rpm. Silicon dioxide thin films: plasma sputter deposition (PSD

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• temperature, the diameter of an individual Si NC, 2rNC, has to be smaller than 5.7 nm. The other factors are the unit charge e and ε0 and εr = 3.9 are the vacuum permittivity and the relative permittivity of silicon dioxide, respectively. Recently, advanced lithographic methods [21] and directed self-assembly

Hydrothermal-derived carbon as a stabilizing matrix for improved cycling performance of silicon-based anodes for lithium-ion full cells

• Mirco Ruttert,
• Florian Holtstiege,
• Jessica Hüsker,
• Markus Börner,
• Martin Winter and
• Tobias Placke

Beilstein J. Nanotechnol. 2018, 9, 2381–2395, doi:10.3762/bjnano.9.223

• ]. Si is considered as the most promising candidate to replace graphite because, aside from the high gravimetric and volumetric capacity, this material can be obtained from inexpensive and highly available precursors (e.g., silicon dioxide) and still offers a relatively low operating potential (≈0.4 vs

• remaining weight is constant. Due to the fact that the pure Si-NPs show only an insignificant weight gain up to 650 °C of ≈1%, caused by the beginning oxidation of Si and the formation of silicon dioxide, the remaining weight of the plateau for the Si/C composites can be considered as the Si content of

High-throughput micro-nanostructuring by microdroplet inkjet printing

• Hendrikje R. Neumann and
• Christine Selhuber-Unkel

Beilstein J. Nanotechnol. 2018, 9, 2372–2380, doi:10.3762/bjnano.9.222

• micelle solution. Here, the same micelle solution was used as for spin-coating the control sample. The inkjet printer employed a disposable cartridge (DMC-11600), which was made of chemically resistant epoxy, polypropylene, silicone and silicon dioxide. The cartridge was composed of two main components: a

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• -uniform doping profiles, the depletion width (and the related correction) will vary with depth. For example, in the particular case discussed in this section, the investigated 20 nm thick SiGe layer is uniformly doped at 1019 cm−3. For typical silicon-dioxide charge densities of 1012 cm−2·eV−1, simple

• same typical silicon-dioxide charge densities, the surface depletion is well below 1 nm (about 0.4 nm at 1020 cm−3 and less than 0.2 nm at 5 × 1020 cm−3; Figure S7, Supporting Information File 1) and its impact on the quantification of the DHE depth profiles can therefore be neglected. Differential

• active. A first run of six etch cycles (15 min each) was initially performed. The sample was then kept for three days in a clean room environment. Then, a second run of three etch cycles was carried out. Both runs were initiated without removing the initial native silicon dioxide. Electrical parameters

Nanoporous silicon nitride-based membranes of controlled pore size, shape and areal density: Fabrication as well as electrophoretic and molecular filtering characterization

• Axel Seidenstücker,
• Stefan Beirle,
• Fabian Enderle,
• Paul Ziemann,
• Othmar Marti and
• Alfred Plettl

Beilstein J. Nanotechnol. 2018, 9, 1390–1398, doi:10.3762/bjnano.9.131

• silicon dioxide layers during rapid thermal annealing [13]. This fabrication offers the advantage of full compatibility to semiconductor fabrication techniques. While pore distance and pore size can be controlled within acceptable limits, the generated pores are random in position and the membrane

Al₂O₃/TiO₂ inverse opals from electrosprayed self-assembled templates

• Arnau Coll,
• Sandra Bermejo,
• David Hernández and
• Luís Castañer

Beilstein J. Nanotechnol. 2018, 9, 216–223, doi:10.3762/bjnano.9.23

• size) or silicon dioxide nanoparticles with dimensions typically several hundreds of micrometers with a close packed, face-centered cubic, three-dimensional order. In parallel we have shown the use of Al2O3 as a good candidate for the inverse opal supporting layer regarding the low temperature